お問い合わせ
ダウンロード
マニュアル、データシート、ソフトウェアなどのダウンロード：
フィードバック
製品サポートとダウンロード
テクトロニクスの製品サポートへようこそ
当社は、技術的な問題について、時間をかけて丁寧にご説明させていただきます。しかし、お忙しいお客様もおられることでしょう。そのため、現行製品のほか、多くの製造中止の製品についても、マニュアル、データ・シート、ソフトウェア等を用意し、簡単にダウンロードしていだだけるようにしております。ご使用の製品をお知らせ下さい。関連するあらゆるリソースをご提供いたします。
選択された製品型名は現在購入可能です。以下のサポート情報を提供しています。
-
データシート 文書番号： リリースの日付 4200A-SCS Parameter Analyzer Datasheet
1KW-60780-2
-
技術情報 ドキュメントの種類 リリースの日付 4200A‐SCSパラメータアナライザを用いたFETベースのバイオセンサのDC I‐V特性評価
このアプリケーションノートは、典型的なバイオFETを説明し、SMU からデバイスへの電気的接続をどのように行うかを解説し、共通の DC I−V測定および測定を行うために使用される機器を定義し、 最適な結果を得るために考慮すべき事項について説明します。アプリケーション・ノート 4215-CVU容量電圧測定ユニットによるフェムトファラド(1e-15F)レベルの容量測定
このアプリケーション・ノートでは、4215-CVU 容量電圧測定ユニットを使用したフェムトファラドの容量測定を行う方法について説明します。また、 適切な接続と、最良の結果を得るためのClariusソフトウェアでの適切なテスト設定方法も含まれています。アプリケーション・ノート 不揮発性メモリ・デバイスのパルスI-V特性評価手法
アプリケーション・ノート 半導体の特性評価手法及び技術
アプリケーション・ノート 4201-SMU型および4211-SMU型を使用した高い測定接続容量における安定した微小電流測定の実現
このアプリケーション・ノートでは、SMUの最大容量仕様について説明し、4201-SMU型および4211-SMU型で安定した微小電流測定を行うことができるいくつかのアプリケーションについて解説します。このアプリケーション事例には、フラット・パネル・ディスプレイ上でのOLEDピクセル・デバイスのテスト、長いケーブルを使用したMOSFETの伝達特性、スイッチ・マトリクスを介したFETテスト、チャック上でのナノFET I-V測定、およびコンデンサのリーク測定が含まれています …アプリケーション・ノート 低電流パルスI-V測定
このアプリケーションノートは、超速I-Vを定義し、時間-測定ウィンドウにおける電流測定の基本的な限界を説明し、低電流超速I-V測定を行うための技法を解説しますアプリケーション・ノート 400Vまでの高電圧に対応 : 3端子デバイスの高電圧CV測定
このアプリケーションノートでは、4200A-CVIVマルチスイッチ・バイアスティー機能を使用してCISS、COSS、およびCRSS測定を行う方法について説明します。また、より高いドレイン電圧を測定するために、どのように計測器のDC出力電圧を2倍に高めた方法も示し、これは、GaNなどのハイパワー半導体デバイスをテストするのに大変役立ちます。アプリケーション・ノート 有機FETのDC IV及びACインピーダンス測定
このアプリケーションノートでは、4200A-SCSパラメータアナライザを使用して、OFETでDC I-VおよびACインピーダンス測定を最適化する方法の概要を説明します。 最良の結果を得るためのタイミングパラメータ、ノイズ低減、シールド、適切なケーブル配線、およびその他の重要な測定上の注意事項について説明します。アプリケーション・ノート 4200A-SCSパラメータアナライザでのMOSFETのゲート電荷測定
はじめに パワーMOSFETは、高速スイッチングデバイスを含む様々な用途で使用されている。デバイスのスイッチング速度は、内部容量によって影響を受け、通常その容量値は入力ゲートCgsおよびドレイン容量Cgdから導出されるCissおよびCossという項目でデータシートに記載される。それらの容量を特定することに加えて、ゲート電荷（QgsおよびQgd）でもMOSFETのスイッチング性能を評価することができ MOSFETのゲート電荷を測定する1つの方法がJEDEC JESD24 …アプリケーション・ノート Model4200-CVU-PWR C-V パワーパッケージを用いた 4200A-SCS半導体特性評価システムでの 高電圧及び高電流CV測定
アプリケーション・ノート MOSFETとMOSCAPデバイスの特性評価でよくある質問 Top10
※PDF版には日本語化された図表が掲載されております。ぜひダウンロードしてご確認ください。 半導体特性評価の課題 エンジニア、研究者は、常に新しい半導体技術、プロセスの開発、または既存技術の改善を求められています。次世代スマートフォンの低電力フロント・エンドの設計、または高効率太陽電池パネルの新素材調査の場合でも、優れた確度、効率で電気測定できる計測器や測定技術が必要になります。 このeガイドでは、半導体測定、特にI-V（電流－電圧）とC-V（容量－電圧）測定に関する一般的な質問に答えます …パンフレット CVとIVの切り替え測定
4200A型 半導体パラメータ・アナライザと 4200A-CVIV型 マルチスイッチを使った簡単な切り替え方法をご紹介します。アプリケーション・ノート TECHNIQUES FOR MEASURING RESISTIVITY FOR MATERIALS CHARACTERIZATION
アプリケーション・ノート $name
アプリケーション・ノート 4200A-SCSパラメータ・アナライザを用いた1/f電流ノイズ測定
電子デバイスは、本質的に、熱(ジョンソン)ノイズ、ショットノイズ、ホワイト(広帯域)ノイズ、および1/f (フリッカ)ノイズを含む異なるタイプのノイズ源を持ちます。1/fノイズは、電流(ISD)またはパワー(PSD)スペクトル密度が周波数に反比例する低周波電子ノイズです。半導体デバイス、ある種の抵抗器、グラフェンのような2D材料、さらには化学電池を含む多くの種類の電子部品 は1/fノイズを示します。多くの場合、デバイスの1/fノイズは、電流を時間の関数として測定し …アプリケーション・ノート Pulse IV Test Automation with the Keithley 4225-PMU Pulse Measure Unit
Introduction Ultra-fast IV sourcing and measuring is important to many semiconductor applications, including nonvolatile memory, power device characterization, CMOS, reliability and MEMS devices. These semiconductor tests are made …アプリケーション・ノート Controlling the 4200A-SCS Parameter Analyzer Using KXCI and Python 3
Introduction The Keithley External Control Interface (KXCI) allows remote control of the instrument modules contained within the Keithley 4200A-SCS Parameter Analyzer by sending external commands from a PC. Each KXCI command has a specific function …アプリケーション・ノート How Energy Trends and New Testing Requirements are Improving Power Conversion Efficiency
The demand for efficient power is accelerating as electrification remains a key driver to reduce carbon emissions. Wide bandgap technologies such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers today to improve power …入門書 Testing High Power Semiconductor Devices from Inception to Market
Introduction This primer examines the life cycle of a power semiconductor device and the tremendous variety of test and characterization activities and measurement challenges faced by the engineers involved in each stage throughout the cycle …入門書 Keithley Connectors Adapters and Tools Selector Guide
Model Name Use With: 237-BAN-3A Triax to Banana Plug 4200A-SCS, 7072,7072-HV, DMMs 237-BNC-TRX 3 …製品選択ガイド Electrical Characterization of Photovoltaic Materials and Solar Cells with the 4200A-SCS Parameter Analyzer
This application note describes how to use the 4200A-SCS Parameter Analyzer to perform a wide range of measurements, including DC and pulsed current-voltage (I‑V), capacitance-voltage (C‑V), capacitance-frequency (C-f), drive level capacitance …アプリケーション・ノート USB Control of the AFG31000 Arbitrary Function Generator Using the 4200A-SCS Parameter Analyzer
Starting with Clarius V1.11, the Tektronix AFG31000 Arbitrary Function Generator can be remotely controlled with the Keithley 4200A-SCS Parameter Analyzer using USB communication and the 4200A-SCS built-in interactive software, Clarius. This …アプリケーション・ノート Supporting the Materials Research of the Future
Advances in materials science are driving the future of many industries where the electrical properties of materials can reveal previously unknown materials characteristics. This flyer highlights the Keithley instrumentation that is vital to helping …ファクト・シート Four Step Error Checker Poster
This printable poster offers insight into errors commonly made when measuring low voltage, low current, low resistance, high resistance, or voltage from a high resistance source. Learn what can cause these errors, and get tips on how to avoid them.ポスター Keithley Low Level Measurements Handbook - 7th Edition
The Keithley Low Level Measurements Handbook is a reference and guide for anyone looking to perform sensitive DC electrical measurements. Scroll down to find the section you need, or download the entire book as a PDF above. Once you click on each of …製品資料 Using USB Communication to Control External Instruments with the 4200A-SCS Parameter Analyzer
Introduction Testing advanced technology often requires a variety of different instruments. Beyond current and voltage measurements, a test may include temperature measurements, advanced waveform generation or sensitive low level …アプリケーション・ノート Using the 4200A-SCS Parameter Analyzer Built-in FFT Functions
Introduction Fourier analysis enables the conversion between signals in the time domain to signals in the frequency domain. Fast Fourier Transformation (FFT) computations are useful when acquiring DC signals such as current, voltage, and time and …アプリケーション・ノート Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the 4200A-SCS Parameter Analyzer
アプリケーション・ノート C-V Characterization of MOS Capacitors Using the Model 4200-SCS Semiconductor Characterization System
アプリケーション・ノート Using the Model 4225-RPM Remote Amplifier/ Switch to Automate Switching Between DC I-V, C-V, and Pulsed I-V Measurements
アプリケーション・ノート Making Optimal Capacitance and AC Impedance Measurements with the 4200A-SCS Parameter Analyzer
Introduction Capacitance-voltage (C-V) and AC impedance measurements are commonly performed on many types of devices for a wide variety of applications. For example, C-V measurements are used to determine these device …アプリケーション・ノート Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the 4200A-SCS Parameter Analyzer
アプリケーション・ノート Making van der Pauw Resistivity and Hall Voltage Measurements Using the 4200A-SCS Parameter Analyzer
This application note provides an overview of the van der Pauw and Hall effect measurement methods and how to use the built-in applications that are included with the 4200A-SCS Parameter Analyzer to perform these measurements.アプリケーション・ノート Performing Charge Pumping Measurements with the 4200A-SCS Parameter Analyzer
This application note explains how to make charge pumping measurements using the 4200A-SCS with the optional 4225-PMU Ultra-Fast I-V Module (PMU) or 4220-PGU Pulse Generator Unit (PGU).アプリケーション・ノート Evolving Materials and Testing for Emerging Generations of Power Electronics Design
Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching …テクニカル・ブリーフ 1 ns Pulsing Solutions for Non-Volatile Memory Testing
Until recently, floating gate (FG) NAND flash memory technology has been successful in meeting the demand for non-volatile memory (NVM) devices for tablets and smartphones. However, there is increasing concern in the …テクニカル・ブリーフ Wafer Level Reliability Testing with the Keithley Model 4200A-SCS Parameter Analyzer
Introduction The continuing push for more devices on each chip and faster clock speeds is driving the demand for shrinking geometries, new materials, and novel technologies. All of these factors have a tremendous impact on the lifetime and …アプリケーション・ノート Keithley Instrumentation for Electrochemical Test Methods and Applications
With more than 60 years of measurement expertise, Keithley Instruments is a world leader in advanced electronic test instrumentation. Our customers are scientists and engineers in a wide range of research and industrial …アプリケーション・ノート Measuring MOSFET Gate Charge with the 4200A-SCS Parameter Analyzer
Introduction Power MOSFETs are used in a variety of applications and can be used as high-speed switching. The switching speed of the device is affected by internal capacitances, which is typically specified in data sheets in terms of Ciss and Coss …アプリケーション・ノート Using the 4200A-CVIV Multi-Switch to Make High Voltage and High Current C-V Measurements
This application note explains the implementation of the bias tee modes of the 4200A-CVIV to make high voltage C-V measurement. It assumes the reader is familiar with making C-V measurements with the Keithley 4200A-SCS using the CVIV.アプリケーション・ノート Upgrade Your 4200-SCS System and Protect Your Investment
Upgrade your 4200-SCS Parameter Analyzer to the 4200A-SCS - the industry's highest performance analyzer - and accelerate I-V, C-V, and ultra-fast pulsed I-V testing of your complex devices for materials research, semiconductor device design, process …ファクト・シート SOLUTIONS FOR SCIENTIFIC AND ENGINEERING RESEARCH
パンフレット TECHNIQUES FOR MEASURING RESISTIVITY FOR MATERIALS CHARACTERIZATION
Resistivity Measurements of Semiconductor Materials Using the 4200A-SCS Parameter Analyzer and a Four-Point Collinear Probe Introduction Electrical resistivity is a basic material property that quantifies a material’s …アプリケーション・ノート Optimizing Low Current Measurements with the 4200A-SCS Parameter Analyzer
Introduction Many critical applications demand the ability to measure very low currents such as picoamps or less. These applications include determining the gate leakage current of FETs, testing sensitive nano-electronic …アプリケーション・ノート Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the 4200A-SCS Parameter Analyzer
アプリケーション・ノート An Ultra-Fast Single Pulse (UFSP) Technique for Channel Effective Mobility Measurement
アプリケーション・ノート Resistivity Measurements of Semiconductor Materials Using the 4200A-SCS Parameter Analyzer and a Four-Point Collinear Probe
Introduction Electrical resistivity is a basic material property that quantifies a material’s opposition to current flow; it is the reciprocal of conductivity. The resistivity of a material depends upon several factors …アプリケーション・ノート C‑V Characterization of MOS Capacitors Using the 4200A-SCS Parameter Analyzer
アプリケーション・ノート Touch, Test, Invent with the Next Generation Current and Voltage Source-Measure Instruments
ファクト・シート Breathe New Life into Your 4200-SCS Parameter Analyzer
ファクト・シート Moving from Windows XP to Windows 7? Upgrade Your Model 4200-SCS
ハウツー・ガイド Pulsed I-V Testing for Components and Semiconductor Devices - Applications Guide
アプリケーション・ノート DC I-V Testing for Components and Semiconductor Devices
DC I-V measurements are the cornerstone of device and material testing. This DC I-V testing applications e-guide features a concentration of application notes on DC I-V testing methods and techniques using Keithley’s Model 4200-SCS Parameter Analyzer …アプリケーション・ノート C-V Testing for Semiconductor Components and Devices - Applications Guide
C-V Characterization of MOS Capacitors Using the Model 4200-SCS Parameter Analyzer Introduction Maintaining the quality and reliability of gate oxides of MOS structures is a critical task in a semiconductor fab. Capacitance-evoltage (C-V) …アプリケーション・ノート E-Handbook Guide to Switch Considerations by Signal Type
Introduction Many electronic test systems use relay switching to connect multiple devices to sources and measurement instruments. In some cases,multiple sources and measuring instruments are connected to a single device …ファクト・シート Ultra Fast Single Pulse Technique for Channel Effective Mobility Measurement
アプリケーション・ノート How to Choose and Apply Source Measure Unit SMU Instruments
アプリケーション・ノート How to Choose and Apply Source Measure Unit SMU Instruments
アプリケーション・ノート How to Choose and Apply Source Measure Unit SMU Instruments
アプリケーション・ノート DC Electrical Characterization of RF Power Transistors
アプリケーション・ノート ACS Integrated Test System for Lab-Based Automation
アプリケーション・ノート Advances in Electrical Measurements for Nanotechnology E-Handbook
Rev 3.13ファクト・シート Ultra-Fast I-V Applications for the Model 4225-PMU Ultra-Fast I-V Module
アプリケーション・ノート Four-Probe Resistivity and Hall Voltage Measurements with the Model 4200-SCS
Introduction Semiconductor material research and device testing often involve determining the resistivity and Hall mobility of a sample. The resistivity of semiconductor material is primarily dependent on the bulk doping. In a …アプリケーション・ノート Model 4200-SCS Semiconductor Characterization System
Full color brochure covering the semiconductor characterization system, Model 4200-scs.パンフレット KTEI V8.2 for the Model 4200-SCS: Characterize NVM, Measure VLF C-V, Make More Pulsed or Ultra-fast I-V Measurements in Parallel
パンフレット Discover Today's Solutions for Tomorrow's Nano Characterization Challenges
パンフレット Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the Model 4200-SCS Semiconductor Characterization System
Introduction Carbon nanotubes (CNTs) have been the subject of a lot of scientific research in recent years, due not only to their small size but to their remarkable electronic and mechanical properties and many potential applications …アプリケーション・ノート Performing Charge Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System
アプリケーション・ノート Safely Using the Interlock on the Keithley Model 4200-SCS
Use the safety interlock circuit to avoid personal injury or death caused by hazardous voltages. Safety interlock connections The safety interlock feature on the Model 4200-SCS should be used to avoid possible shock …アプリケーション・ノート Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the Model 4200-SCS Semiconductor Characterization System
アプリケーション・ノート Optimizing Low Current Measurements with the Model 4200-SCS Semiconductor Characterization System
Introduction Many critical applications demand the ability to measure very low currents such as picoamps or less. These applications include determining the gate leakage current of FETs, testing sensitive nano-electronic …アプリケーション・ノート Measuring Inductance Using the 4200-CVU Capacitance-Voltage Unit
アプリケーション・ノート Making I-V and C-V Measurements on Solar/Photovoltaic Cells Using the Model 4200-SCS Semiconductor Characterization System
アプリケーション・ノート Pulse Testing for Nanoscale Devices
技術資料 The Emerging Challenges of Nanotechnology Testing
Nanotechnology is an important new area of research that promises significant advances in electronics, materials, biotechnology, alternative energy sources, and dozens of other applications. …技術資料 Gate Dielectric Capacitance-Voltage Characterization Using the Model 4200
Introduction Maintaining the quality and reliability of gate oxides is one of the most critical and challenging tasks in any semiconductor fab. With feature sizes shrinking to 0.18µm or less, gate oxides are often less than 30Å …アプリケーション・ノート Creating External Instruments Drivers for the Model 4200-SCS
アプリケーション・ノート Using the Wafer Map Parameters Option with Cascade Nucleus Prober Software and the Model 4200-SCS
アプリケーション・ノート Monitoring Channel Hot Carrier (CHC) Degradation of MOSFET Devices using Keithley's Model 4200-SCS
Introduction Channel Hot Carrier (CHC) induced degradation is an important reliability concern in modern ULSI circuits. Charge carriers gain kinetic energy as they are accelerated by the large electric field across …アプリケーション・ノート Probing Transistors at the Contact Level in Integrated Circuits
アプリケーション・ノート Improving the Measurement Speed and Overall Test Time of the Model 4200-SCS
アプリケーション・ノート Qualifying High-K Gate Materials with Charge-Trapping Measurements
As the size of transistors continues to scale down, the use of conventional SiO2 as a gate dielectric material is approaching physical and electrical limits. The principal limitation is high leakage current due to quantum mechanical tunneling of …技術資料 I-V Measurements of Nanoscale Wires and Tubes with the Model 4200-SCS and Zyvex S100 Nanomanipulator
アプリケーション・ノート Evaluating Oxide Reliability
Introduction Oxide integrity is an important reliability concern, especially for today’s ULSI MOSFET devices, where oxide thickness has been scaled to a few atomic layers. The JEDEC 35 Standard (EIA/JESD35, Procedure …アプリケーション・ノート Evaluating Hot Carrier Induced Degradation of MOSFET Devices
Introduction With decreased MOSFET gate length, hot carrier induced degradation has become one of the most important reliability concerns. In the hot carrier effect, carriers are accelerated by the channel electric fields and become …アプリケーション・ノート Making Ultra-Low Current Measurements with the Low-Noise Model 4200-SCS
Making Ultra-Low Current Measurements with the Low-Noise Model 4200-SCS Semiconductor Characteriztion System Parametric characterization of semiconductor devices typically requires making extremely low current measurements. For MOSFET devices, the …アプリケーション・ノート Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the Mode 4200-SCS Semiconductor Characterization System
アプリケーション・ノート Making Charge-Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System and Series 3400 Pulse/Pattern Generator
アプリケーション・ノート Using the Model 4200-CVU-PWR C-V Power Package to Make High Voltage and High Current C-V Measurements with the Model 4200-SCS Semiconductor Characterization System
アプリケーション・ノート Writing Prober Drivers for the Model 4200-SCS
アプリケーション・ノート
-
ソフトウェア ドキュメントの種類 部品番号： リリースの日付 4200A-SCS Clarius+ Software Suite V1.13
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer. If installing on a …Application 4200A-CLARIUS-V1.13 4200A-SCS Clarius+ Software Suite V1.12
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer If installing on a …Application 4200A-CLARIUS-V1.12 4200A-SCS Clarius+ Software Suite V1.3 (Legacy – Unsupported)
This legacy version of Clarius is made available for Windows 7 computers. For the latest version of Clarius+ please visit the 4200A-SCS Product Support page ( Product Support and Downloads | Tektronix ) and select Software. The 4200A-SCS Clarius+ …Application 4200A-CLARIUS-V1.3
-
FAQ FAQ ID I have lost the device library on the 4200A-SCS, how to get it back?
The best way to get the library back is to re-install Clarius the their system. It’s free from our Tek.com website. Here is the link :https://www.tek.com/software/clarius/1-3247546 What is included in the 4200A-SCS Windows 10 Upgrade option?
The 4200A-SCS can be upgraded from the Windows 7 operating system to Windows 10. The part number for this upgrade is 4200A-WIN10-UP. This service will provide a USB flash drive containing the upgrade program files and instructions for installing the …780921 What is the time required to switch between Pulse IV (4225PMU) and CV (4210ACVU) measurements using the 4225-RPM for the 4200A-SCS?
The RPM eliminates the need to re-cable and increases switching speed between Pulsed IV and CV measurements. However, we do not specify the switching time for the RPMs in the data sheets. A simple test using a MDO3102 yeided the below …469646 Is there a resettable fuse on the interlock circuit for model 4200A-SCS?
Yes, there is a resettable fuse. It takes several minutes to reset, please give it some time.This is discussed on page 4 and 5 of the included application note. Here is a link to the application note on the Tek website: https://www.tek …248681 Does the 4200A-SCS support ICCAP?
Although the 4200ICCAP-6.0 driver is obsolete, the 4200A is ICCAP supported through the KXCI software. The 4200 drivers in the KXCI software come with ICCAP in them and all KXCI programs for the 4200 are compatible with the 4200A. Note: ICCAP only …255351 Do I need to calibrate my instruments separately when I upgrade from the 4200-SCS to a 4200A-SCS mainframe?
No; when the 4200A-MF-UP service is selected, the 4200-SCS is converted to the 4200A-SCS mainframe. This system gains the Clarius software. All supported instrument modules in the original system will be moved to the new, 4200A-SCS mainframe and will …780926 Does Model 4200A-SCS support Model 590-CV meter like the Model 4200-SCS?
The Model 590-CV is a stand alone CV meter and can be controlled from either the 4200A-SCS and 4200-SCS using the KIXI (remote interface software).249356 How can I measure hall mobility of 2D materials?
Hall mobility, or electron mobility, of a 2D material is best measured by utilizing the Hall effect. There are several different Keithley solutions for making Hall effect measurements. A Keithley 4200A-SCS Parameter Analyzer with 4 Source Measure …71221
