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Fiche technique Numéro du document : Date de publication 4200A-SCS Parameter Analyzer Datasheet
1KW-60780-6
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Documents techniques Type de document Date de publication Mesure de la charge de grille MOSFET avec l'analyseur paramétrique 4200A-SCS<br /> <br />
Introduction Les MOSFET de puissance sont utilisés dans différentes applications et peuvent être utilisés comme commutation à grande vitesse. La vitesse de commutation de l’appareil est affectée par les capacités internes, qui sont généralement …Note d'application Pulse IV Test Automation with the Keithley 4225-PMU Pulse Measure Unit
Introduction Ultra-fast IV sourcing and measuring is important to many semiconductor applications, including nonvolatile memory, power device characterization, CMOS, reliability and MEMS devices. These semiconductor tests are made …Note d'application Controlling the 4200A-SCS Parameter Analyzer Using KXCI and Python 3
Introduction The Keithley External Control Interface (KXCI) allows remote control of the instrument modules contained within the Keithley 4200A-SCS Parameter Analyzer by sending external commands from a PC. Each KXCI command has a specific function …Note d'application How Energy Trends and New Testing Requirements are Improving Power Conversion Efficiency
The demand for efficient power is accelerating as electrification remains a key driver to reduce carbon emissions. Wide bandgap technologies such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers today to improve power …Guide de présentation Testing High Power Semiconductor Devices from Inception to Market
Introduction This primer examines the life cycle of a power semiconductor device and the tremendous variety of test and characterization activities and measurement challenges faced by the engineers involved in each stage throughout the cycle …Guide de présentation Keithley Connectors Adapters and Tools Selector Guide
Model Name Use With: 237-BAN-3A Triax to Banana Plug 4200A-SCS, 7072,7072-HV, DMMs 237-BNC-TRX 3 …Guide de sélection de produit Electrical Characterization of Photovoltaic Materials and Solar Cells with the 4200A-SCS Parameter Analyzer
This application note describes how to use the 4200A-SCS Parameter Analyzer to perform a wide range of measurements, including DC and pulsed current-voltage (I‑V), capacitance-voltage (C‑V), capacitance-frequency (C-f), drive level capacitance …Note d'application USB Control of the AFG31000 Arbitrary Function Generator Using the 4200A-SCS Parameter Analyzer
Starting with Clarius V1.11, the Tektronix AFG31000 Arbitrary Function Generator can be remotely controlled with the Keithley 4200A-SCS Parameter Analyzer using USB communication and the 4200A-SCS built-in interactive software, Clarius. This …Note d'application Supporting the Materials Research of the Future
Advances in materials science are driving the future of many industries where the electrical properties of materials can reveal previously unknown materials characteristics. This flyer highlights the Keithley instrumentation that is vital to helping …Fiche d'informations 1/f Noise Measurements Using the 4200A-SCS Parameter Analyzer
This application note explains how to make 1/f noise measurements with the 4200A-SCS Parameter Analyzer using both source measure units and the PMU.Note d'application Four Step Error Checker Poster
This printable poster offers insight into errors commonly made when measuring low voltage, low current, low resistance, high resistance, or voltage from a high resistance source. Learn what can cause these errors, and get tips on how to avoid them.Affiche Keithley Low Level Measurements Handbook - 7th Edition
The Keithley Low Level Measurements Handbook is a reference and guide for anyone looking to perform sensitive DC electrical measurements. Scroll down to find the section you need, or download the entire book as a PDF above. Once you click on each of …Article produit Making Three-Terminal Capacitance-Voltage Measurements Up to 400 V Using the 4200A-CVIV Multi-Switch Bias Tee Capability
This application note explains how the CISS, COSS and CRSS measurements are made using the bias tee capabilities in the 4200A-CVIV Multi-Switch. This application note also shows how the instrument DC output voltage was doubled from 200 V to 400 V for …Note d'application Pulse I-V Characterization of Non-Volatile Memory Technologies
This application note provides a brief history of non-volatile memory (NVM), an overview of the test parameters required for electrical characterization of NVM materials and devices, and a discussion of emerging test requirements. It also provides …Note d'application Using USB Communication to Control External Instruments with the 4200A-SCS Parameter Analyzer
Introduction Testing advanced technology often requires a variety of different instruments. Beyond current and voltage measurements, a test may include temperature measurements, advanced waveform generation or sensitive low level …Note d'application Using the 4200A-SCS Parameter Analyzer Built-in FFT Functions
Introduction Fourier analysis enables the conversion between signals in the time domain to signals in the frequency domain. Fast Fourier Transformation (FFT) computations are useful when acquiring DC signals such as current, voltage, and time and …Note d'application DC I-V Characterization of FET-Based Biosensors Using the 4200A-SCS Parameter Analyzer
Introduction Extensive research and development have been invested in semiconductor-based biosensors because of their low cost, rapid response, and accurate detection. In particular, field effect transistor (FET) based biosensors, or …Note d'application Automating High and Low Frequency C-V Measurements and Interface Trap Density (DIT) Calculations of MOS Capacitors Using the 4200A-SCS Parameter Analyzer
This application note discusses how to use the 4200A-SCS Parameter Analyzer to measure and to automatically switch between high and low frequency C-V measurements on MOS capacitors. Basic information on MOS capacitors and common parameter extractions …Note d'application Making Femtofarad (1e-15F) Capacitance Measurements with the 4215-CVU
Introduction Typical semiconductor capacitances are in the picofarad (pF) or nanofarad (nF) ranges. Many commercially available LCR or capacitance meters can measure these values using proper measurement techniques including …Note d'application Using the 4200-CVU-PWR C-V Power Package to Make High Voltage and High Current C-V Measurements with the 4200A-SCS Parameter Analyzer
Note d'application DC I-V and AC Impedance Testing of Organic FETs
This application note outlines how to optimize DC I-V and AC impedance measurements on OFETs using the 4200A-SCS Parameter Analyzer. Timing parameters, noise reduction, shielding, proper cabling, and other important measurement considerations for …Note d'application Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the 4200A-SCS Parameter Analyzer
Note d'application C-V Characterization of MOS Capacitors Using the Model 4200-SCS Semiconductor Characterization System
Note d'application Switching Between C-V and I-V Measurements Using the 4200A-CVIV Multi-Switch and 4200A-SCS Parameter Analyzer
Introduction Full parametric characterization of a semiconductor device usually requires an array of tests to gather all of the device's important parameters. Current-voltage (I-V) tests are used to determine device …Note d'application Using the Model 4225-RPM Remote Amplifier/ Switch to Automate Switching Between DC I-V, C-V, and Pulsed I-V Measurements
Note d'application Making Optimal Capacitance and AC Impedance Measurements with the 4200A-SCS Parameter Analyzer
Introduction Capacitance-voltage (C-V) and AC impedance measurements are commonly performed on many types of devices for a wide variety of applications. For example, C-V measurements are used to determine these device …Note d'application Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the 4200A-SCS Parameter Analyzer
Note d'application Making van der Pauw Resistivity and Hall Voltage Measurements Using the 4200A-SCS Parameter Analyzer
This application note provides an overview of the van der Pauw and Hall effect measurement methods and how to use the built-in applications that are included with the 4200A-SCS Parameter Analyzer to perform these measurements.Note d'application Making Stable Low Current Measurements with High Test Connection Capacitance Using the 4201-SMU and 4211-SMU
Introduction The source measure unit (SMU) is an instrument that can source current or voltage, and measure both current and voltage. The SMU is used for I-V characterization of a wide variety of devices and materials, and is designed …Note d'application Performing Charge Pumping Measurements with the 4200A-SCS Parameter Analyzer
This application note explains how to make charge pumping measurements using the 4200A-SCS with the optional 4225-PMU Ultra-Fast I-V Module (PMU) or 4220-PGU Pulse Generator Unit (PGU).Note d'application Evolving Materials and Testing for Emerging Generations of Power Electronics Design
Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching …Dossier technique Making Low Current Pulse I-V Measurements
This application note defines ultra-fast I-V, explains the fundamental limits of current measurements as a function of time and measure window, and describes the techniques for making ultra-fast I-V low current measurements.Note d'application 1 ns Pulsing Solutions for Non-Volatile Memory Testing
Until recently, floating gate (FG) NAND flash memory technology has been successful in meeting the demand for non-volatile memory (NVM) devices for tablets and smartphones. However, there is increasing concern in the …Dossier technique Wafer Level Reliability Testing with the Keithley Model 4200A-SCS Parameter Analyzer
Introduction The continuing push for more devices on each chip and faster clock speeds is driving the demand for shrinking geometries, new materials, and novel technologies. All of these factors have a tremendous impact on the lifetime and …Note d'application Keithley Instrumentation for Electrochemical Test Methods and Applications
With more than 60 years of measurement expertise, Keithley Instruments is a world leader in advanced electronic test instrumentation. Our customers are scientists and engineers in a wide range of research and industrial …Note d'application Measuring MOSFET Gate Charge with the 4200A-SCS Parameter Analyzer
Introduction Power MOSFETs are used in a variety of applications and can be used as high-speed switching. The switching speed of the device is affected by internal capacitances, which is typically specified in data sheets in terms of Ciss and Coss …Note d'application Using the 4200A-CVIV Multi-Switch to Make High Voltage and High Current C-V Measurements
This application note explains the implementation of the bias tee modes of the 4200A-CVIV to make high voltage C-V measurement. It assumes the reader is familiar with making C-V measurements with the Keithley 4200A-SCS using the CVIV.Note d'application Upgrade Your 4200-SCS System and Protect Your Investment
Upgrade your 4200-SCS Parameter Analyzer to the 4200A-SCS - the industry's highest performance analyzer - and accelerate I-V, C-V, and ultra-fast pulsed I-V testing of your complex devices for materials research, semiconductor device design, process …Fiche d'informations Simplifying MOSFET and MOSCAP Device Characterization e-Guide
The Semiconductor Characterization Challenge Engineers and researchers are constantly challenged to create new semiconductor technologies or processes or improve existing ones. Whether the challenge is designing a lower power front end for a next …Brochure SOLUTIONS FOR SCIENTIFIC AND ENGINEERING RESEARCH
Brochure TECHNIQUES FOR MEASURING RESISTIVITY FOR MATERIALS CHARACTERIZATION
Resistivity Measurements of Semiconductor Materials Using the 4200A-SCS Parameter Analyzer and a Four-Point Collinear Probe Introduction Electrical resistivity is a basic material property that quantifies a material’s …Note d'application METHODS AND TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION
Note d'application Optimizing Low Current Measurements with the 4200A-SCS Parameter Analyzer
Introduction Many critical applications demand the ability to measure very low currents such as picoamps or less. These applications include determining the gate leakage current of FETs, testing sensitive nano-electronic …Note d'application Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the 4200A-SCS Parameter Analyzer
Note d'application An Ultra-Fast Single Pulse (UFSP) Technique for Channel Effective Mobility Measurement
Note d'application Resistivity Measurements of Semiconductor Materials Using the 4200A-SCS Parameter Analyzer and a Four-Point Collinear Probe
Introduction Electrical resistivity is a basic material property that quantifies a material’s opposition to current flow; it is the reciprocal of conductivity. The resistivity of a material depends upon several factors …Note d'application C‑V Characterization of MOS Capacitors Using the 4200A-SCS Parameter Analyzer
Note d'application Touch, Test, Invent with the Next Generation Current and Voltage Source-Measure Instruments
Fiche d'informations Breathe New Life into Your 4200-SCS Parameter Analyzer
Fiche d'informations Moving from Windows XP to Windows 7? Upgrade Your Model 4200-SCS
Manuel d'instructions Pulsed I-V Testing for Components and Semiconductor Devices - Applications Guide
Note d'application DC I-V Testing for Components and Semiconductor Devices
DC I-V measurements are the cornerstone of device and material testing. This DC I-V testing applications e-guide features a concentration of application notes on DC I-V testing methods and techniques using Keithley’s Model 4200-SCS Parameter Analyzer …Note d'application C-V Testing for Semiconductor Components and Devices - Applications Guide
C-V Characterization of MOS Capacitors Using the Model 4200-SCS Parameter Analyzer Introduction Maintaining the quality and reliability of gate oxides of MOS structures is a critical task in a semiconductor fab. Capacitance-evoltage (C-V) …Note d'application E-Handbook Guide to Switch Considerations by Signal Type
Introduction Many electronic test systems use relay switching to connect multiple devices to sources and measurement instruments. In some cases,multiple sources and measuring instruments are connected to a single device …Fiche d'informations Ultra Fast Single Pulse Technique for Channel Effective Mobility Measurement
Note d'application How to Choose and Apply Source Measure Unit SMU Instruments
Note d'application How to Choose and Apply Source Measure Unit SMU Instruments
Note d'application How to Choose and Apply Source Measure Unit SMU Instruments
Note d'application DC Electrical Characterization of RF Power Transistors
Note d'application ACS Integrated Test System for Lab-Based Automation
Note d'application Advances in Electrical Measurements for Nanotechnology E-Handbook
Rev 3.13Fiche d'informations Ultra-Fast I-V Applications for the Model 4225-PMU Ultra-Fast I-V Module
Note d'application Four-Probe Resistivity and Hall Voltage Measurements with the Model 4200-SCS
Introduction Semiconductor material research and device testing often involve determining the resistivity and Hall mobility of a sample. The resistivity of semiconductor material is primarily dependent on the bulk doping. In a …Note d'application Model 4200-SCS Semiconductor Characterization System
Full color brochure covering the semiconductor characterization system, Model 4200-scs.Brochure KTEI V8.2 for the Model 4200-SCS: Characterize NVM, Measure VLF C-V, Make More Pulsed or Ultra-fast I-V Measurements in Parallel
Brochure Discover Today's Solutions for Tomorrow's Nano Characterization Challenges
Brochure Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the Model 4200-SCS Semiconductor Characterization System
Introduction Carbon nanotubes (CNTs) have been the subject of a lot of scientific research in recent years, due not only to their small size but to their remarkable electronic and mechanical properties and many potential applications …Note d'application Performing Charge Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System
Note d'application Safely Using the Interlock on the Keithley Model 4200-SCS
Use the safety interlock circuit to avoid personal injury or death caused by hazardous voltages. Safety interlock connections The safety interlock feature on the Model 4200-SCS should be used to avoid possible shock …Note d'application Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the Model 4200-SCS Semiconductor Characterization System
Note d'application Optimizing Low Current Measurements with the Model 4200-SCS Semiconductor Characterization System
Introduction Many critical applications demand the ability to measure very low currents such as picoamps or less. These applications include determining the gate leakage current of FETs, testing sensitive nano-electronic …Note d'application Measuring Inductance Using the 4200-CVU Capacitance-Voltage Unit
Note d'application Making I-V and C-V Measurements on Solar/Photovoltaic Cells Using the Model 4200-SCS Semiconductor Characterization System
Note d'application Pulse Testing for Nanoscale Devices
Article technique The Emerging Challenges of Nanotechnology Testing
Nanotechnology is an important new area of research that promises significant advances in electronics, materials, biotechnology, alternative energy sources, and dozens of other applications. …Article technique Gate Dielectric Capacitance-Voltage Characterization Using the Model 4200
Introduction Maintaining the quality and reliability of gate oxides is one of the most critical and challenging tasks in any semiconductor fab. With feature sizes shrinking to 0.18µm or less, gate oxides are often less than 30Å …Note d'application Creating External Instruments Drivers for the Model 4200-SCS
Note d'application Using the Wafer Map Parameters Option with Cascade Nucleus Prober Software and the Model 4200-SCS
Note d'application Monitoring Channel Hot Carrier (CHC) Degradation of MOSFET Devices using Keithley's Model 4200-SCS
Introduction Channel Hot Carrier (CHC) induced degradation is an important reliability concern in modern ULSI circuits. Charge carriers gain kinetic energy as they are accelerated by the large electric field across …Note d'application Probing Transistors at the Contact Level in Integrated Circuits
Note d'application Improving the Measurement Speed and Overall Test Time of the Model 4200-SCS
Note d'application Qualifying High-K Gate Materials with Charge-Trapping Measurements
As the size of transistors continues to scale down, the use of conventional SiO2 as a gate dielectric material is approaching physical and electrical limits. The principal limitation is high leakage current due to quantum mechanical tunneling of …Article technique I-V Measurements of Nanoscale Wires and Tubes with the Model 4200-SCS and Zyvex S100 Nanomanipulator
Note d'application Evaluating Oxide Reliability
Introduction Oxide integrity is an important reliability concern, especially for today’s ULSI MOSFET devices, where oxide thickness has been scaled to a few atomic layers. The JEDEC 35 Standard (EIA/JESD35, Procedure …Note d'application Evaluating Hot Carrier Induced Degradation of MOSFET Devices
Introduction With decreased MOSFET gate length, hot carrier induced degradation has become one of the most important reliability concerns. In the hot carrier effect, carriers are accelerated by the channel electric fields and become …Note d'application Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the Mode 4200-SCS Semiconductor Characterization System
Note d'application Writing Prober Drivers for the Model 4200-SCS
Note d'application Making Charge-Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System and Series 3400 Pulse/Pattern Generator
Note d'application Making Ultra-Low Current Measurements with the Low-Noise Model 4200-SCS
Making Ultra-Low Current Measurements with the Low-Noise Model 4200-SCS Semiconductor Characteriztion System Parametric characterization of semiconductor devices typically requires making extremely low current measurements. For MOSFET devices, the …Note d'application Using the Model 4200-CVU-PWR C-V Power Package to Make High Voltage and High Current C-V Measurements with the Model 4200-SCS Semiconductor Characterization System
Note d'application
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Logiciel Type de document Numéro de référence : Date de publication 4200A-SCS Clarius+ Software Suite V1.13
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer. If installing on a …Application 4200A-CLARIUS-V1.13 4200A-SCS Clarius+ Software Suite V1.12
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer If installing on a …Application 4200A-CLARIUS-V1.12 4200A-SCS Clarius+ Software Suite V1.3 (Legacy – Unsupported)
This legacy version of Clarius is made available for Windows 7 computers. For the latest version of Clarius+ please visit the 4200A-SCS Product Support page ( Product Support and Downloads | Tektronix ) and select Software. The 4200A-SCS Clarius+ …Application 4200A-CLARIUS-V1.3
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FAQ Numéro de la FAQ What is included in the 4200A-SCS Windows 10 Upgrade option?
The 4200A-SCS can be upgraded from the Windows 7 operating system to Windows 10. The part number for this upgrade is 4200A-WIN10-UP. This service will provide a USB flash drive containing the upgrade program files and instructions for installing the …780921 What is the time required to switch between Pulse IV (4225PMU) and CV (4210ACVU) measurements using the 4225-RPM for the 4200A-SCS?
The RPM eliminates the need to re-cable and increases switching speed between Pulsed IV and CV measurements. However, we do not specify the switching time for the RPMs in the data sheets. A simple test using a MDO3102 yeided the below …469646 Is there a resettable fuse on the interlock circuit for model 4200A-SCS?
Yes, there is a resettable fuse. It takes several minutes to reset, please give it some time.This is discussed on page 4 and 5 of the included application note. Here is a link to the application note on the Tek website: https://www.tek …248681 Does Model 4200A-SCS support Model 590-CV meter like the Model 4200-SCS?
The Model 590-CV is a stand alone CV meter and can be controlled from either the 4200A-SCS and 4200-SCS using the KIXI (remote interface software).249356 Do I need to calibrate my instruments separately when I upgrade from the 4200-SCS to a 4200A-SCS mainframe?
No; when the 4200A-MF-UP service is selected, the 4200-SCS is converted to the 4200A-SCS mainframe. This system gains the Clarius software. All supported instrument modules in the original system will be moved to the new, 4200A-SCS mainframe and will …780926 I have lost the device library on the 4200A-SCS, how to get it back?
The best way to get the library back is to re-install Clarius the their system. It’s free from our Tek.com website. Here is the link :https://www.tek.com/software/clarius/1-3247546 How can I measure hall mobility of 2D materials?
Hall mobility, or electron mobility, of a 2D material is best measured by utilizing the Hall effect. There are several different Keithley solutions for making Hall effect measurements. A Keithley 4200A-SCS Parameter Analyzer with 4 Source Measure …71221 Does the 4200A-SCS support ICCAP?
Although the 4200ICCAP-6.0 driver is obsolete, the 4200A is ICCAP supported through the KXCI software. The 4200 drivers in the KXCI software come with ICCAP in them and all KXCI programs for the 4200 are compatible with the 4200A. Note: ICCAP only …255351
