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Fiche technique Numéro du document : Date de publication 4200A-SCS Parameter Analyzer Datasheet
1KW-60780-6
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Documents techniques Type de document Date de publication Mesure de la charge de grille MOSFET avec l'analyseur paramétrique 4200A-SCS<br /> <br />
Introduction Les MOSFET de puissance sont utilisés dans différentes applications et peuvent être utilisés comme commutation à grande vitesse. La vitesse de commutation de l’appareil est affectée par les capacités internes, qui sont généralement …Note d'application DC I-V and AC Impedance Testing of Organic FETs
This application note outlines how to optimize DC I-V and AC impedance measurements on OFETs using the 4200A-SCS Parameter Analyzer. Timing parameters, noise reduction, shielding, proper cabling, and other important measurement considerations for …Note d'application Making Three-Terminal Capacitance-Voltage Measurements Up to 400 V Using the 4200A-CVIV Multi-Switch Bias Tee Capability
This application note explains how the CISS, COSS and CRSS measurements are made using the bias tee capabilities in the 4200A-CVIV Multi-Switch. This application note also shows how the instrument DC output voltage was doubled from 200 V to 400 V for …Note d'application Using the 4200A-CVIV Multi-Switch to Make High Voltage and High Current C-V Measurements
This application note explains the implementation of the bias tee modes of the 4200A-CVIV to make high voltage C-V measurement. It assumes the reader is familiar with making C-V measurements with the Keithley 4200A-SCS using the CVIV.Note d'application Making Optimal Capacitance and AC Impedance Measurements with the 4200A-SCS Parameter Analyzer
Introduction Capacitance-voltage (C-V) and AC impedance measurements are commonly performed on many types of devices for a wide variety of applications. For example, C-V measurements are used to determine these device …Note d'application Making Low Current Pulse I-V Measurements
This application note defines ultra-fast I-V, explains the fundamental limits of current measurements as a function of time and measure window, and describes the techniques for making ultra-fast I-V low current measurements.Note d'application Making Stable Low Current Measurements with High Test Connection Capacitance Using the 4201-SMU and 4211-SMU
Introduction The source measure unit (SMU) is an instrument that can source current or voltage, and measure both current and voltage. The SMU is used for I-V characterization of a wide variety of devices and materials, and is designed …Note d'application 1 ns Pulsing Solutions for Non-Volatile Memory Testing
Until recently, floating gate (FG) NAND flash memory technology has been successful in meeting the demand for non-volatile memory (NVM) devices for tablets and smartphones. However, there is increasing concern in the …Dossier technique Making Femtofarad (1e-15F) Capacitance Measurements with the 4215-CVU
Introduction Typical semiconductor capacitances are in the picofarad (pF) or nanofarad (nF) ranges. Many commercially available LCR or capacitance meters can measure these values using proper measurement techniques including …Note d'application Measuring MOSFET Gate Charge with the 4200A-SCS Parameter Analyzer
Introduction Power MOSFETs are used in a variety of applications and can be used as high-speed switching. The switching speed of the device is affected by internal capacitances, which is typically specified in data sheets in terms of Ciss and Coss …Note d'application Wafer Level Reliability Testing with the Keithley Model 4200A-SCS Parameter Analyzer
Introduction The continuing push for more devices on each chip and faster clock speeds is driving the demand for shrinking geometries, new materials, and novel technologies. All of these factors have a tremendous impact on the lifetime and …Note d'application Making van der Pauw Resistivity and Hall Voltage Measurements Using the 4200A-SCS Parameter Analyzer
This application note provides an overview of the van der Pauw and Hall effect measurement methods and how to use the built-in applications that are included with the 4200A-SCS Parameter Analyzer to perform these measurements.Note d'application Switching Between C-V and I-V Measurements Using the 4200A-CVIV Multi-Switch and 4200A-SCS Parameter Analyzer
Introduction Full parametric characterization of a semiconductor device usually requires an array of tests to gather all of the device's important parameters. Current-voltage (I-V) tests are used to determine device …Note d'application
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Logiciel Type de document Numéro de référence : Date de publication 4200A-SCS Clarius+ Software Suite V1.13
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer. If installing on a …Application 4200A-CLARIUS-V1.13 4200A-SCS Clarius+ Software Suite V1.12
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer If installing on a …Application 4200A-CLARIUS-V1.12 4200A-SCS Clarius+ Software Suite V1.3 (Legacy – Unsupported)
This legacy version of Clarius is made available for Windows 7 computers. For the latest version of Clarius+ please visit the 4200A-SCS Product Support page ( Product Support and Downloads | Tektronix ) and select Software. The 4200A-SCS Clarius+ …Application 4200A-CLARIUS-V1.3
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FAQ Numéro de la FAQ How can I measure hall mobility of 2D materials?
Hall mobility, or electron mobility, of a 2D material is best measured by utilizing the Hall effect. There are several different Keithley solutions for making Hall effect measurements. A Keithley 4200A-SCS Parameter Analyzer with 4 Source Measure …71221