Challenges in GaN HEMT Power Device DC Characterization

GaN HEMT devices are very fast and efficient and have a unique structure and performance, but oscillation is one of the primary challenges with high frequency devices during the DC characterization. This application note discusses the oscillation challenges and offers best practices (optimized cabling and connection, adding ferrites or capacitance, and others) to best address the need to minimize or eliminate the different oscillation contributors.