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Техническое описание Номер публикации: Дата выпуска 4200A-SCS Parameter Analyzer Datasheet
1KW-60780-6
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Руководства Тип руководства Номер по каталогу: Дата выпуска Model 4200A-SCS Pulse Card (PGU and PMU) User's Manual
User (Предварительные установки > Пользователь) 4200A-PMU-900-01C Model 4200A-SCS KXCI Remote Control Programming
Электронное руководство по программированию 4200A-KXCI-907-01D Model 4200A-SCS Setup and Maintenance User's Manual
Основной потребитель 4200A-908-01E Model 4200A-SCS LPT Library Programming
Электронное руководство по программированию 4200A-LPT-907-01D Model 4200A-SCS KULT and KULT Extension Programming
Электронное руководство по программированию 4200A-KULT-907-01D Model 4200A-SCS Clarius User's Manual
Основной потребитель 4200A-914-01E Model 4210-MMPC-W Multi-measurement Prober Cable Kit
User (Предварительные установки > Пользователь) PA-1085B Model 4210-MMPC-S Multi-measurement Prober Cable Kit
User (Предварительные установки > Пользователь) PA-1000E Model 4210-MMPC-L Multi-measurement Prober Cable Kit
PA-1080B 4200A-SCS Repacking and Shipping Instructions
User (Предварительные установки > Пользователь) 077182700 Model 4200A-SCS Capacitance-Voltage Unit (CVU) User's Manual
Основной потребитель 4200A-CVU-900-01B Model 4200A-SCS Prober and External Instrument Control
User (Предварительные установки > Пользователь) 4200A-913-01B Model 4200A-SCS Declassification and Security Instructions
Исключение из классификации 077126201 Model 4200A-SCS-PKC High Power I-V and C-V Parameter Analyzer Quick Start Guide
User (Предварительные установки > Пользователь) 4200A-PKC-903-01B Model 4200A-SCS-PKB High Resolution I-V and C-V Parameter Analyzer Quick Start Guide
User (Предварительные установки > Пользователь) 4200A-PKB-903-01B Model 4200A-SCS-PKA High Resolution I-V Parameter Analyzer Quick Start Guide
User (Предварительные установки > Пользователь) 4200A-PKA-903-01B Model 4200A-SCS Parameter Analyzer Quick Start Guide
Основной потребитель 4200A-903-01C Model 4200-MAG-BASE
User (Предварительные установки > Пользователь) PA-624D Model 4200A-SCS-PK3 Parameter Analyzer Quick Start Guide
User (Предварительные установки > Пользователь) 4200A-PK3-903-01A Model 4200A-SCS-PK2 Parameter Analyzer Quick Start Guide
User (Предварительные установки > Пользователь) 4200A-PK2-903-01A Model 4200A-SCS-PK1 Parameter Analyzer Quick Start Guide
User (Предварительные установки > Пользователь) 4200A-PK1-903-01A Model 4200A-CVIV Multi-Switch User's Manual
User's manual for the 4200A CV-IV multi-switch.Основной потребитель 4200A-CVIV-900-01E Model 4200A-SCS Source-Measure Unit (SMU) User's Manual
Основной потребитель 4200A-SMU-900-01A Model 4200A-RM Rack Mount Kit Installation Instructions
User (Предварительные установки > Пользователь) 071348702 Model 4210-MMPC-C Multi-Measurement Prober Cable Kit Quick Start Guide
User (Предварительные установки > Пользователь) PA-1001D Modèle 4200A-SCS Liste d'Avertissements
Warnings from the QSGs, User's Manual and Reference Manual translated into French for the 4200A-SCS OtherUser (Предварительные установки > Пользователь) 077126000
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Техническая документация Тип документа Дата выпуска TECHNIQUES FOR MEASURING RESISTIVITY FOR MATERIALS CHARACTERIZATION
Примечание по применению Pulse IV Test Automation with the Keithley 4225-PMU Pulse Measure Unit
Introduction Ultra-fast IV sourcing and measuring is important to many semiconductor applications, including nonvolatile memory, power device characterization, CMOS, reliability and MEMS devices. These semiconductor tests are made …Примечание по применению Controlling the 4200A-SCS Parameter Analyzer Using KXCI and Python 3
Introduction The Keithley External Control Interface (KXCI) allows remote control of the instrument modules contained within the Keithley 4200A-SCS Parameter Analyzer by sending external commands from a PC. Each KXCI command has a specific function …Примечание по применению How Energy Trends and New Testing Requirements are Improving Power Conversion Efficiency
The demand for efficient power is accelerating as electrification remains a key driver to reduce carbon emissions. Wide bandgap technologies such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers today to improve power …Начальное руководство Testing High Power Semiconductor Devices from Inception to Market
Introduction This primer examines the life cycle of a power semiconductor device and the tremendous variety of test and characterization activities and measurement challenges faced by the engineers involved in each stage throughout the cycle …Начальное руководство Keithley Connectors Adapters and Tools Selector Guide
Model Name Use With: 237-BAN-3A Triax to Banana Plug 4200A-SCS, 7072,7072-HV, DMMs 237-BNC-TRX 3 …Руководство по выбору прибора Electrical Characterization of Photovoltaic Materials and Solar Cells with the 4200A-SCS Parameter Analyzer
This application note describes how to use the 4200A-SCS Parameter Analyzer to perform a wide range of measurements, including DC and pulsed current-voltage (I‑V), capacitance-voltage (C‑V), capacitance-frequency (C-f), drive level capacitance …Примечание по применению USB Control of the AFG31000 Arbitrary Function Generator Using the 4200A-SCS Parameter Analyzer
Starting with Clarius V1.11, the Tektronix AFG31000 Arbitrary Function Generator can be remotely controlled with the Keithley 4200A-SCS Parameter Analyzer using USB communication and the 4200A-SCS built-in interactive software, Clarius. This …Примечание по применению Supporting the Materials Research of the Future
Advances in materials science are driving the future of many industries where the electrical properties of materials can reveal previously unknown materials characteristics. This flyer highlights the Keithley instrumentation that is vital to helping …Информационный бюллетень 1/f Noise Measurements Using the 4200A-SCS Parameter Analyzer
This application note explains how to make 1/f noise measurements with the 4200A-SCS Parameter Analyzer using both source measure units and the PMU.Примечание по применению Four Step Error Checker Poster
This printable poster offers insight into errors commonly made when measuring low voltage, low current, low resistance, high resistance, or voltage from a high resistance source. Learn what can cause these errors, and get tips on how to avoid them.Объявление Keithley Low Level Measurements Handbook - 7th Edition
The Keithley Low Level Measurements Handbook is a reference and guide for anyone looking to perform sensitive DC electrical measurements. Scroll down to find the section you need, or download the entire book as a PDF above. Once you click on each of …Статья о приборе Making Three-Terminal Capacitance-Voltage Measurements Up to 400 V Using the 4200A-CVIV Multi-Switch Bias Tee Capability
This application note explains how the CISS, COSS and CRSS measurements are made using the bias tee capabilities in the 4200A-CVIV Multi-Switch. This application note also shows how the instrument DC output voltage was doubled from 200 V to 400 V for …Примечание по применению Pulse I-V Characterization of Non-Volatile Memory Technologies
This application note provides a brief history of non-volatile memory (NVM), an overview of the test parameters required for electrical characterization of NVM materials and devices, and a discussion of emerging test requirements. It also provides …Примечание по применению Using USB Communication to Control External Instruments with the 4200A-SCS Parameter Analyzer
Introduction Testing advanced technology often requires a variety of different instruments. Beyond current and voltage measurements, a test may include temperature measurements, advanced waveform generation or sensitive low level …Примечание по применению Using the 4200A-SCS Parameter Analyzer Built-in FFT Functions
Introduction Fourier analysis enables the conversion between signals in the time domain to signals in the frequency domain. Fast Fourier Transformation (FFT) computations are useful when acquiring DC signals such as current, voltage, and time and …Примечание по применению DC I-V Characterization of FET-Based Biosensors Using the 4200A-SCS Parameter Analyzer
Introduction Extensive research and development have been invested in semiconductor-based biosensors because of their low cost, rapid response, and accurate detection. In particular, field effect transistor (FET) based biosensors, or …Примечание по применению Automating High and Low Frequency C-V Measurements and Interface Trap Density (DIT) Calculations of MOS Capacitors Using the 4200A-SCS Parameter Analyzer
This application note discusses how to use the 4200A-SCS Parameter Analyzer to measure and to automatically switch between high and low frequency C-V measurements on MOS capacitors. Basic information on MOS capacitors and common parameter extractions …Примечание по применению Making Femtofarad (1e-15F) Capacitance Measurements with the 4215-CVU
Introduction Typical semiconductor capacitances are in the picofarad (pF) or nanofarad (nF) ranges. Many commercially available LCR or capacitance meters can measure these values using proper measurement techniques including …Примечание по применению Using the 4200-CVU-PWR C-V Power Package to Make High Voltage and High Current C-V Measurements with the 4200A-SCS Parameter Analyzer
Примечание по применению DC I-V and AC Impedance Testing of Organic FETs
This application note outlines how to optimize DC I-V and AC impedance measurements on OFETs using the 4200A-SCS Parameter Analyzer. Timing parameters, noise reduction, shielding, proper cabling, and other important measurement considerations for …Примечание по применению Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the 4200A-SCS Parameter Analyzer
Примечание по применению C-V Characterization of MOS Capacitors Using the Model 4200-SCS Semiconductor Characterization System
Примечание по применению Switching Between C-V and I-V Measurements Using the 4200A-CVIV Multi-Switch and 4200A-SCS Parameter Analyzer
Introduction Full parametric characterization of a semiconductor device usually requires an array of tests to gather all of the device's important parameters. Current-voltage (I-V) tests are used to determine device …Примечание по применению Using the Model 4225-RPM Remote Amplifier/ Switch to Automate Switching Between DC I-V, C-V, and Pulsed I-V Measurements
Примечание по применению Making Optimal Capacitance and AC Impedance Measurements with the 4200A-SCS Parameter Analyzer
Introduction Capacitance-voltage (C-V) and AC impedance measurements are commonly performed on many types of devices for a wide variety of applications. For example, C-V measurements are used to determine these device …Примечание по применению Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the 4200A-SCS Parameter Analyzer
Примечание по применению Making van der Pauw Resistivity and Hall Voltage Measurements Using the 4200A-SCS Parameter Analyzer
This application note provides an overview of the van der Pauw and Hall effect measurement methods and how to use the built-in applications that are included with the 4200A-SCS Parameter Analyzer to perform these measurements.Примечание по применению Making Stable Low Current Measurements with High Test Connection Capacitance Using the 4201-SMU and 4211-SMU
Introduction The source measure unit (SMU) is an instrument that can source current or voltage, and measure both current and voltage. The SMU is used for I-V characterization of a wide variety of devices and materials, and is designed …Примечание по применению Performing Charge Pumping Measurements with the 4200A-SCS Parameter Analyzer
This application note explains how to make charge pumping measurements using the 4200A-SCS with the optional 4225-PMU Ultra-Fast I-V Module (PMU) or 4220-PGU Pulse Generator Unit (PGU).Примечание по применению Evolving Materials and Testing for Emerging Generations of Power Electronics Design
Transitioning from silicon to wide bandgap semiconductors such as silicon carbide and gallium nitride means that power module designs can be physically smaller than what came before, while also increasing MOSFET switching …Краткое техническое описание Making Low Current Pulse I-V Measurements
This application note defines ultra-fast I-V, explains the fundamental limits of current measurements as a function of time and measure window, and describes the techniques for making ultra-fast I-V low current measurements.Примечание по применению 1 ns Pulsing Solutions for Non-Volatile Memory Testing
Until recently, floating gate (FG) NAND flash memory technology has been successful in meeting the demand for non-volatile memory (NVM) devices for tablets and smartphones. However, there is increasing concern in the …Краткое техническое описание Wafer Level Reliability Testing with the Keithley Model 4200A-SCS Parameter Analyzer
Introduction The continuing push for more devices on each chip and faster clock speeds is driving the demand for shrinking geometries, new materials, and novel technologies. All of these factors have a tremendous impact on the lifetime and …Примечание по применению Keithley Instrumentation for Electrochemical Test Methods and Applications
With more than 60 years of measurement expertise, Keithley Instruments is a world leader in advanced electronic test instrumentation. Our customers are scientists and engineers in a wide range of research and industrial …Примечание по применению Measuring MOSFET Gate Charge with the 4200A-SCS Parameter Analyzer
Introduction Power MOSFETs are used in a variety of applications and can be used as high-speed switching. The switching speed of the device is affected by internal capacitances, which is typically specified in data sheets in terms of Ciss and Coss …Примечание по применению Using the 4200A-CVIV Multi-Switch to Make High Voltage and High Current C-V Measurements
This application note explains the implementation of the bias tee modes of the 4200A-CVIV to make high voltage C-V measurement. It assumes the reader is familiar with making C-V measurements with the Keithley 4200A-SCS using the CVIV.Примечание по применению Upgrade Your 4200-SCS System and Protect Your Investment
Upgrade your 4200-SCS Parameter Analyzer to the 4200A-SCS - the industry's highest performance analyzer - and accelerate I-V, C-V, and ultra-fast pulsed I-V testing of your complex devices for materials research, semiconductor device design, process …Информационный бюллетень Simplifying MOSFET and MOSCAP Device Characterization e-Guide
The Semiconductor Characterization Challenge Engineers and researchers are constantly challenged to create new semiconductor technologies or processes or improve existing ones. Whether the challenge is designing a lower power front end for a next …Брошюра SOLUTIONS FOR SCIENTIFIC AND ENGINEERING RESEARCH
Брошюра TECHNIQUES FOR MEASURING RESISTIVITY FOR MATERIALS CHARACTERIZATION
Resistivity Measurements of Semiconductor Materials Using the 4200A-SCS Parameter Analyzer and a Four-Point Collinear Probe Introduction Electrical resistivity is a basic material property that quantifies a material’s …Примечание по применению METHODS AND TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION
Примечание по применению Optimizing Low Current Measurements with the 4200A-SCS Parameter Analyzer
Introduction Many critical applications demand the ability to measure very low currents such as picoamps or less. These applications include determining the gate leakage current of FETs, testing sensitive nano-electronic …Примечание по применению Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the 4200A-SCS Parameter Analyzer
Примечание по применению An Ultra-Fast Single Pulse (UFSP) Technique for Channel Effective Mobility Measurement
Примечание по применению Resistivity Measurements of Semiconductor Materials Using the 4200A-SCS Parameter Analyzer and a Four-Point Collinear Probe
Introduction Electrical resistivity is a basic material property that quantifies a material’s opposition to current flow; it is the reciprocal of conductivity. The resistivity of a material depends upon several factors …Примечание по применению C‑V Characterization of MOS Capacitors Using the 4200A-SCS Parameter Analyzer
Примечание по применению Touch, Test, Invent with the Next Generation Current and Voltage Source-Measure Instruments
Информационный бюллетень Breathe New Life into Your 4200-SCS Parameter Analyzer
Информационный бюллетень Moving from Windows XP to Windows 7? Upgrade Your Model 4200-SCS
Руководство Pulsed I-V Testing for Components and Semiconductor Devices - Applications Guide
Примечание по применению DC I-V Testing for Components and Semiconductor Devices
DC I-V measurements are the cornerstone of device and material testing. This DC I-V testing applications e-guide features a concentration of application notes on DC I-V testing methods and techniques using Keithley’s Model 4200-SCS Parameter Analyzer …Примечание по применению C-V Testing for Semiconductor Components and Devices - Applications Guide
C-V Characterization of MOS Capacitors Using the Model 4200-SCS Parameter Analyzer Introduction Maintaining the quality and reliability of gate oxides of MOS structures is a critical task in a semiconductor fab. Capacitance-evoltage (C-V) …Примечание по применению E-Handbook Guide to Switch Considerations by Signal Type
Introduction Many electronic test systems use relay switching to connect multiple devices to sources and measurement instruments. In some cases,multiple sources and measuring instruments are connected to a single device …Информационный бюллетень Ultra Fast Single Pulse Technique for Channel Effective Mobility Measurement
Примечание по применению How to Choose and Apply Source Measure Unit SMU Instruments
Примечание по применению How to Choose and Apply Source Measure Unit SMU Instruments
Примечание по применению How to Choose and Apply Source Measure Unit SMU Instruments
Примечание по применению DC Electrical Characterization of RF Power Transistors
Примечание по применению ACS Integrated Test System for Lab-Based Automation
Примечание по применению Advances in Electrical Measurements for Nanotechnology E-Handbook
Rev 3.13Информационный бюллетень Ultra-Fast I-V Applications for the Model 4225-PMU Ultra-Fast I-V Module
Примечание по применению Four-Probe Resistivity and Hall Voltage Measurements with the Model 4200-SCS
Introduction Semiconductor material research and device testing often involve determining the resistivity and Hall mobility of a sample. The resistivity of semiconductor material is primarily dependent on the bulk doping. In a …Примечание по применению Model 4200-SCS Semiconductor Characterization System
Full color brochure covering the semiconductor characterization system, Model 4200-scs.Брошюра KTEI V8.2 for the Model 4200-SCS: Characterize NVM, Measure VLF C-V, Make More Pulsed or Ultra-fast I-V Measurements in Parallel
Брошюра Discover Today's Solutions for Tomorrow's Nano Characterization Challenges
Брошюра Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the Model 4200-SCS Semiconductor Characterization System
Introduction Carbon nanotubes (CNTs) have been the subject of a lot of scientific research in recent years, due not only to their small size but to their remarkable electronic and mechanical properties and many potential applications …Примечание по применению Performing Charge Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System
Примечание по применению Safely Using the Interlock on the Keithley Model 4200-SCS
Use the safety interlock circuit to avoid personal injury or death caused by hazardous voltages. Safety interlock connections The safety interlock feature on the Model 4200-SCS should be used to avoid possible shock …Примечание по применению Using the Ramp Rate Method for Making Quasistatic C-V Measurements with the Model 4200-SCS Semiconductor Characterization System
Примечание по применению Optimizing Low Current Measurements with the Model 4200-SCS Semiconductor Characterization System
Introduction Many critical applications demand the ability to measure very low currents such as picoamps or less. These applications include determining the gate leakage current of FETs, testing sensitive nano-electronic …Примечание по применению Measuring Inductance Using the 4200-CVU Capacitance-Voltage Unit
Примечание по применению Making I-V and C-V Measurements on Solar/Photovoltaic Cells Using the Model 4200-SCS Semiconductor Characterization System
Примечание по применению Pulse Testing for Nanoscale Devices
Техническая статья The Emerging Challenges of Nanotechnology Testing
Nanotechnology is an important new area of research that promises significant advances in electronics, materials, biotechnology, alternative energy sources, and dozens of other applications. …Техническая статья Gate Dielectric Capacitance-Voltage Characterization Using the Model 4200
Introduction Maintaining the quality and reliability of gate oxides is one of the most critical and challenging tasks in any semiconductor fab. With feature sizes shrinking to 0.18µm or less, gate oxides are often less than 30Å …Примечание по применению Creating External Instruments Drivers for the Model 4200-SCS
Примечание по применению Using the Wafer Map Parameters Option with Cascade Nucleus Prober Software and the Model 4200-SCS
Примечание по применению Monitoring Channel Hot Carrier (CHC) Degradation of MOSFET Devices using Keithley's Model 4200-SCS
Introduction Channel Hot Carrier (CHC) induced degradation is an important reliability concern in modern ULSI circuits. Charge carriers gain kinetic energy as they are accelerated by the large electric field across …Примечание по применению Probing Transistors at the Contact Level in Integrated Circuits
Примечание по применению Improving the Measurement Speed and Overall Test Time of the Model 4200-SCS
Примечание по применению Qualifying High-K Gate Materials with Charge-Trapping Measurements
As the size of transistors continues to scale down, the use of conventional SiO2 as a gate dielectric material is approaching physical and electrical limits. The principal limitation is high leakage current due to quantum mechanical tunneling of …Техническая статья I-V Measurements of Nanoscale Wires and Tubes with the Model 4200-SCS and Zyvex S100 Nanomanipulator
Примечание по применению Evaluating Oxide Reliability
Introduction Oxide integrity is an important reliability concern, especially for today’s ULSI MOSFET devices, where oxide thickness has been scaled to a few atomic layers. The JEDEC 35 Standard (EIA/JESD35, Procedure …Примечание по применению Evaluating Hot Carrier Induced Degradation of MOSFET Devices
Introduction With decreased MOSFET gate length, hot carrier induced degradation has become one of the most important reliability concerns. In the hot carrier effect, carriers are accelerated by the channel electric fields and become …Примечание по применению Making Ultra-Low Current Measurements with the Low-Noise Model 4200-SCS
Making Ultra-Low Current Measurements with the Low-Noise Model 4200-SCS Semiconductor Characteriztion System Parametric characterization of semiconductor devices typically requires making extremely low current measurements. For MOSFET devices, the …Примечание по применению Performing Very Low Frequency Capacitance-Voltage Measurements on High Impedance Devices Using the Mode 4200-SCS Semiconductor Characterization System
Примечание по применению Making Charge-Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System and Series 3400 Pulse/Pattern Generator
Примечание по применению Using the Model 4200-CVU-PWR C-V Power Package to Make High Voltage and High Current C-V Measurements with the Model 4200-SCS Semiconductor Characterization System
Примечание по применению Writing Prober Drivers for the Model 4200-SCS
Примечание по применению
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Программное обеспечение Тип документа Номер по каталогу: Дата выпуска 4200A-SCS Clarius+ Software Suite V1.13
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer. If installing on a …Application (Предварительные установки > Приложение) 4200A-CLARIUS-V1.13 4200A-SCS Clarius+ Software Suite V1.12
This version of Clarius+ is only supported on Microsoft Windows 10. If installed on the 4200A-SCS system with a Clarius+ release prior to V1.4, contact Keithley, a Tektronix company, at tek.com to upgrade the parameter analyzer If installing on a …Application (Предварительные установки > Приложение) 4200A-CLARIUS-V1.12 4200A-SCS Clarius+ Software Suite V1.3 (Legacy – Unsupported)
This legacy version of Clarius is made available for Windows 7 computers. For the latest version of Clarius+ please visit the 4200A-SCS Product Support page ( Product Support and Downloads | Tektronix ) and select Software. The 4200A-SCS Clarius+ …Application (Предварительные установки > Приложение) 4200A-CLARIUS-V1.3
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Часто задаваемые вопросы Идентификатор часто задаваемых вопросов I have lost the device library on the 4200A-SCS, how to get it back?
The best way to get the library back is to re-install Clarius the their system. It’s free from our Tek.com website. Here is the link :https://www.tek.com/software/clarius/1-3247546 What is included in the 4200A-SCS Windows 10 Upgrade option?
The 4200A-SCS can be upgraded from the Windows 7 operating system to Windows 10. The part number for this upgrade is 4200A-WIN10-UP. This service will provide a USB flash drive containing the upgrade program files and instructions for installing the …780921 Is there a resettable fuse on the interlock circuit for model 4200A-SCS?
Yes, there is a resettable fuse. It takes several minutes to reset, please give it some time.This is discussed on page 4 and 5 of the included application note. Here is a link to the application note on the Tek website: https://www.tek …248681 What is the time required to switch between Pulse IV (4225PMU) and CV (4210ACVU) measurements using the 4225-RPM for the 4200A-SCS?
The RPM eliminates the need to re-cable and increases switching speed between Pulsed IV and CV measurements. However, we do not specify the switching time for the RPMs in the data sheets. A simple test using a MDO3102 yeided the below …469646 Does the 4200A-SCS support ICCAP?
Although the 4200ICCAP-6.0 driver is obsolete, the 4200A is ICCAP supported through the KXCI software. The 4200 drivers in the KXCI software come with ICCAP in them and all KXCI programs for the 4200 are compatible with the 4200A. Note: ICCAP only …255351 Do I need to calibrate my instruments separately when I upgrade from the 4200-SCS to a 4200A-SCS mainframe?
No; when the 4200A-MF-UP service is selected, the 4200-SCS is converted to the 4200A-SCS mainframe. This system gains the Clarius software. All supported instrument modules in the original system will be moved to the new, 4200A-SCS mainframe and will …780926 Does Model 4200A-SCS support Model 590-CV meter like the Model 4200-SCS?
The Model 590-CV is a stand alone CV meter and can be controlled from either the 4200A-SCS and 4200-SCS using the KIXI (remote interface software).249356 How can I measure hall mobility of 2D materials?
Hall mobility, or electron mobility, of a 2D material is best measured by utilizing the Hall effect. There are several different Keithley solutions for making Hall effect measurements. A Keithley 4200A-SCS Parameter Analyzer with 4 Source Measure …71221
